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Ground State
Abstract As mentioned previously, in the earlier investigations of the FQHE the crucial question was the nature of the ground state. As the GaAs-heterostructures where the FQHE was discovered have very high electron mobility, and because of the subsequent discovery of the FQHE only in high-mobility Si-MOSFETs, the Coulomb interaction between electrons was quite naturally expected to play a dominant role in the FQHE. The earliest numerical calculation of the ground state including Coulomb interactions for various filling fractions was by Yoshioka et al. [5.1]. They investigated the eigen-states of an electron system in a periodic rectangular geometry, by numerically diagonalizing the Hamiltonian. Their results, as we shall discuss in the following section, revealed several interesting features; the most important result was, of course, that the ground state had a significantly lower energy than that of a Hartree-Fock (HF) Wigner crystal.
Ground State
Abstract As mentioned previously, in the earlier investigations of the FQHE the crucial question was the nature of the ground state. As the GaAs-heterostructures where the FQHE was discovered have very high electron mobility, and because of the subsequent discovery of the FQHE only in high-mobility Si-MOSFETs, the Coulomb interaction between electrons was quite naturally expected to play a dominant role in the FQHE. The earliest numerical calculation of the ground state including Coulomb interactions for various filling fractions was by Yoshioka et al. [5.1]. They investigated the eigen-states of an electron system in a periodic rectangular geometry, by numerically diagonalizing the Hamiltonian. Their results, as we shall discuss in the following section, revealed several interesting features; the most important result was, of course, that the ground state had a significantly lower energy than that of a Hartree-Fock (HF) Wigner crystal.
Ground State
Professor Chakraborty, Tapash (author) / Dr. Pietiläinen, Pekka (author)
Second Enlarged and Updated Edition
1995-01-01
48 pages
Article/Chapter (Book)
Electronic Resource
English