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SIMS — Secondary Ion Mass Spectrometry

MacDonald, R. J. / King, B. V.

Abstract Secondary ion mass spectroscopy (SIMS) is an ion beam analysis technique useful for characterizing the top few micrometres of samples. Primary ions of energy 0.5–20 keV, commonly O−, Cs+, Xe+, Ar+, Ga+ and O 2 + , are used to erode the sample surface and the secondary elemental or cluster ions formed from the target atoms by the impact are extracted from the surface by an electric field and then energy and mass analyzed. The ions are then detected by a Faraday cup or electron multiplier and the resulting secondary ion distribution displayed as a function of mass, surface location or depth into the sample (Fig. 5.1).

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SIMS — Secondary Ion Mass Spectrometry

MacDonald, R. J. / King, B. V.

Abstract Secondary ion mass spectroscopy (SIMS) is an ion beam analysis technique useful for characterizing the top few micrometres of samples. Primary ions of energy 0.5–20 keV, commonly O−, Cs+, Xe+, Ar+, Ga+ and O 2 + , are used to erode the sample surface and the secondary elemental or cluster ions formed from the target atoms by the impact are extracted from the surface by an electric field and then energy and mass analyzed. The ions are then detected by a Faraday cup or electron multiplier and the resulting secondary ion distribution displayed as a function of mass, surface location or depth into the sample (Fig. 5.1).

SIMS — Secondary Ion Mass Spectrometry

MacDonald, R. J. / King, B. V.

Abstract Secondary ion mass spectroscopy (SIMS) is an ion beam analysis technique useful for characterizing the top few micrometres of samples. Primary ions of energy 0.5–20 keV, commonly O−, Cs+, Xe+, Ar+, Ga+ and O 2 + , are used to erode the sample surface and the secondary elemental or cluster ions formed from the target atoms by the impact are extracted from the surface by an electric field and then energy and mass analyzed. The ions are then detected by a Faraday cup or electron multiplier and the resulting secondary ion distribution displayed as a function of mass, surface location or depth into the sample (Fig. 5.1).

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Title:

SIMS — Secondary Ion Mass Spectrometry

Contributors:

MacDonald, R. J. (author) / King, B. V. (author)

Published in:

Surface Analysis Methods in Materials Science ; 117-147

Springer Series in Surface Sciences ; 23

Publication date:

1992-01-01

Size:

31 pages

ISBN:

978-3-662-02769-1 , 978-3-662-02767-7

ISSN:

DOI:

https://doi.org/10.1007/978-3-662-02767-7_5

Type of media:

Article/Chapter (Book)

Type of material:

Electronic Resource

Language:

English

Keywords:

CdTe Film , Shadow Cone , High Energy Secondary Physics , Surface and Interface Science, Thin Films , Surfaces and Interfaces, Thin Films

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