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Scanning Tunneling Microscopy of III–V Compound Semiconductor (001) Surfaces
Summary This paper reviews advances towards a comprehensive understanding of the geometric and electronic structures and also the chemical properties of the principal reconstructions found on the (001) surface of III–V compound semiconductors, made during the first decade following the invention of Scanning Tunneling Microscopy in the early 1980s. We consider arsenides, such as GaAs, InAs and AlAs, phosphides, such as GaP and InP, antimonides, such as GaSb, AlSb and InSb, and also nitrides (GaN), with special emphasis on GaAs(001).
Scanning Tunneling Microscopy of III–V Compound Semiconductor (001) Surfaces
Summary This paper reviews advances towards a comprehensive understanding of the geometric and electronic structures and also the chemical properties of the principal reconstructions found on the (001) surface of III–V compound semiconductors, made during the first decade following the invention of Scanning Tunneling Microscopy in the early 1980s. We consider arsenides, such as GaAs, InAs and AlAs, phosphides, such as GaP and InP, antimonides, such as GaSb, AlSb and InSb, and also nitrides (GaN), with special emphasis on GaAs(001).
Scanning Tunneling Microscopy of III–V Compound Semiconductor (001) Surfaces
Xue, Qi-Kun (author) / Hashizume, T. (author) / Sakurai, T. (author)
2000-01-01
90 pages
Article/Chapter (Book)
Electronic Resource
English
Scanning Tunneling Microscopy Image , Reflection High Energy Electron Diffraction , Molecular Beam Epitaxy Growth , Reflection High Energy Electron Diffraction Pattern , Versus Compound Semiconductor Engineering , Electronics and Microelectronics, Instrumentation , Science, general , Materials Science, general , Surfaces and Interfaces, Thin Films , Optical and Electronic Materials , Solid State Physics
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