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Group-V Adatoms
Abstract The outer s-electrons of group-V atoms are tightly bound so that only their p-electrons are involved in chemical bonds with substrate atoms on semiconductor surfaces. In that group-V adatoms behave similar to trivalent group-Ill adsorbates. On Si- and Ge(111) surfaces group-V atoms substitute for the topmost layer of substrate atoms while they form dimers on {100} surfaces of these elemental semiconductors.
Group-V Adatoms
Abstract The outer s-electrons of group-V atoms are tightly bound so that only their p-electrons are involved in chemical bonds with substrate atoms on semiconductor surfaces. In that group-V adatoms behave similar to trivalent group-Ill adsorbates. On Si- and Ge(111) surfaces group-V atoms substitute for the topmost layer of substrate atoms while they form dimers on {100} surfaces of these elemental semiconductors.
Group-V Adatoms
Professor Dr. Mönch, Winfried (author)
Third, Revised Edition
2001-01-01
13 pages
Article/Chapter (Book)
Electronic Resource
English
Dangling Bond , Zigzag Chain , Substrate Atom , Energy Distribution Curve , Surface Brillouin Zone Chemistry , Physical Chemistry , Optics and Electrodynamics , Electronics and Microelectronics, Instrumentation , Surfaces and Interfaces, Thin Films , Optical and Electronic Materials , Characterization and Evaluation of Materials
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