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Group-III Adatoms on Silicon Surfaces
Abstract On Si(111) surfaces, group-III atoms induce (√3 × √3)R30o reconstructions. Al, Ga, and In atoms have larger covalent radii than silicon and adsorb in T 4 sites. Each of the trivalent adatoms thus saturates the dangling bonds of three silicon surface atoms. Boron, on the other hand, has a much smaller covalent radius than silicon and, therefore, bonds between boron atoms occupying T 4 sites and nearest-neighbor silicon atoms would be strongly elongated. Substitutional 65 sites beneath silicon atoms in T 4 sites are energetically much more favorable configurations for the small boron atoms.
Group-III Adatoms on Silicon Surfaces
Abstract On Si(111) surfaces, group-III atoms induce (√3 × √3)R30o reconstructions. Al, Ga, and In atoms have larger covalent radii than silicon and adsorb in T 4 sites. Each of the trivalent adatoms thus saturates the dangling bonds of three silicon surface atoms. Boron, on the other hand, has a much smaller covalent radius than silicon and, therefore, bonds between boron atoms occupying T 4 sites and nearest-neighbor silicon atoms would be strongly elongated. Substitutional 65 sites beneath silicon atoms in T 4 sites are energetically much more favorable configurations for the small boron atoms.
Group-III Adatoms on Silicon Surfaces
Professor Dr. Mönch, Winfried (author)
Third, Revised Edition
2001-01-01
10 pages
Article/Chapter (Book)
Electronic Resource
English
Boron Atom , Covalent Radius , Dangling Bond , Large Binding Energy , Unit Mesh Chemistry , Physical Chemistry , Optics and Electrodynamics , Electronics and Microelectronics, Instrumentation , Surfaces and Interfaces, Thin Films , Optical and Electronic Materials , Characterization and Evaluation of Materials
| Springer Verlag | 2001
Vacancies and adatoms complexes on silicon surface
| British Library Online Contents | 2001
| Springer Verlag | 2001
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