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Silicon Single-Electron Devices
Abstract Single-electron devices (SEDs) are attracting a lot of attention because of their ability to manipulate just one electron. They operate using a Coulomb blockade, which occurs in tiny structures made of conductive material due to electrostatic interactions between confined electrons. Although any kind of conductive material can be used, silicon is preferable in terms of integrated circuit applications because, on a silicon substrate, SEDs can be used in combination with conventional complementary metal-oxide-semiconductor (CMOS) circuits. In addition, the well-established technologies used for fabricating CMOS large-scale integrated circuits can be employed to make these small structures. Silicon SEDs are employed in two fields: memory and logic. The simple operating principle of SEDs, i.e., capacitive coupling, has meant that many kinds of logic and memory applications have been proposed and tested. Another important issue with SEDs is the accurate control of a single electron, which is a challenge that must be met by ultimate electronics. The current status of silicon-based SEDs is introduced.
Silicon Single-Electron Devices
Abstract Single-electron devices (SEDs) are attracting a lot of attention because of their ability to manipulate just one electron. They operate using a Coulomb blockade, which occurs in tiny structures made of conductive material due to electrostatic interactions between confined electrons. Although any kind of conductive material can be used, silicon is preferable in terms of integrated circuit applications because, on a silicon substrate, SEDs can be used in combination with conventional complementary metal-oxide-semiconductor (CMOS) circuits. In addition, the well-established technologies used for fabricating CMOS large-scale integrated circuits can be employed to make these small structures. Silicon SEDs are employed in two fields: memory and logic. The simple operating principle of SEDs, i.e., capacitive coupling, has meant that many kinds of logic and memory applications have been proposed and tested. Another important issue with SEDs is the accurate control of a single electron, which is a challenge that must be met by ultimate electronics. The current status of silicon-based SEDs is introduced.
Silicon Single-Electron Devices
Takahashi, Yasuo (author) / Ono, Yukinori (author) / Fujiwara, Akira (author) / Nishiguchi, Katsuhiko (author) / Inokawa, Hiroshi (author)
2009-01-01
48 pages
Article/Chapter (Book)
Electronic Resource
English
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