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    Neutron Study on Growth Process of Oxygen Precipitates in Czochralskigrown Silicon Crystals

    New search for: Takeda, Takayoshi
    New search for: Komura, Shigehiro
    New search for: Ohsawa, Akira
    New search for: Honda, Koichiro

    Abstract The subject of the behavior of oxygen in Czochralski-grown silicon has been intensely studied in the last severaj years because of both beneficial and harmful effects caused by oxygen.1) Silicon crystals used for manufacture of LSI are grown by the Czochralski method and contain interstitial oxygen of about 1018 atoms/cm3. The oxygen concentration is much greater than the solubility limit at the temperature where the wafers are heat-treated for device fabrication of LSI and therefore oxygen precipitation takes place during the heat-treatment.

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    Neutron Study on Growth Process of Oxygen Precipitates in Czochralskigrown Silicon Crystals

    New search for: Takeda, Takayoshi
    New search for: Komura, Shigehiro
    New search for: Ohsawa, Akira
    New search for: Honda, Koichiro

    Abstract The subject of the behavior of oxygen in Czochralski-grown silicon has been intensely studied in the last severaj years because of both beneficial and harmful effects caused by oxygen.1) Silicon crystals used for manufacture of LSI are grown by the Czochralski method and contain interstitial oxygen of about 1018 atoms/cm3. The oxygen concentration is much greater than the solubility limit at the temperature where the wafers are heat-treated for device fabrication of LSI and therefore oxygen precipitation takes place during the heat-treatment.

    Access

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    Neutron Study on Growth Process of Oxygen Precipitates in Czochralskigrown Silicon Crystals

    New search for: Takeda, Takayoshi
    New search for: Komura, Shigehiro
    New search for: Ohsawa, Akira
    New search for: Honda, Koichiro

    Abstract The subject of the behavior of oxygen in Czochralski-grown silicon has been intensely studied in the last severaj years because of both beneficial and harmful effects caused by oxygen.1) Silicon crystals used for manufacture of LSI are grown by the Czochralski method and contain interstitial oxygen of about 1018 atoms/cm3. The oxygen concentration is much greater than the solubility limit at the temperature where the wafers are heat-treated for device fabrication of LSI and therefore oxygen precipitation takes place during the heat-treatment.

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    Title:

    Neutron Study on Growth Process of Oxygen Precipitates in Czochralskigrown Silicon Crystals

    Contributors:

    Takeda, Takayoshi (author) / Komura, Shigehiro (author) / Ohsawa, Akira (author) / Honda, Koichiro (author)

    Published in:

    Dynamics of Ordering Processes in Condensed Matter ; 549-554

    Publication date:

    1988-01-01

    Size:

    6 pages

    ISBN:

    978-1-4612-8295-2 , 978-1-4613-1019-8

    DOI:

    https://doi.org/10.1007/978-1-4613-1019-8_70

    Type of media:

    Article/Chapter (Book)

    Type of material:

    Electronic Resource

    Language:

    English

    Keywords:

    Annealing Time , Edge Length , Silicon Crystal , Scatter Length Density , Semiconductor Silicon Physics , Condensed Matter Physics , Characterization and Evaluation of Materials

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