A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
Ferroelectric and Optoelectronic Coupling Effects in Layered Ferroelectric Semiconductor‐Based FETs for Visual Simulation
https://orcid.org/0000-0003-1511-4281
AbstractControlling polarization states of ferroelectrics can enrich optoelectronic properties and functions, offering a new avenue for designing advanced electronic and optoelectronic devices. Here, ferroelectric semiconductor‐based field‐effect transistors (FeSFETs) are fabricated, where the channel is a ferroelectric semiconductor (e.g., α‐In2Se3). Multiple conductance states are achieved in α‐In2Se3‐based FeSFETs by controlling the ferroelectric polarization. The on/off current ratio (Ion/Ioff) is ≈105 with a dark current of ≈10−11 A by applying a single positive gate voltage pulse. Moreover, the device shows excellent endurance and retention performance. In a further step, the carrier transports and corresponding physics mechanism in various polarization states are studied by using Kelvin probe force microscopy (KPFM) and optoelectronic measurements. Finally, the α‐In2Se3‐based FETs can be trained. It can recognize handwritten digit images from MNIST dataset with a successful recognition accuracy of ≈95.5%. This work provides a new design idea and theoretical support for advanced optoelectronic devices in the field of in‐memory sensing and computing.
Ferroelectric and Optoelectronic Coupling Effects in Layered Ferroelectric Semiconductor‐Based FETs for Visual Simulation
https://orcid.org/0000-0003-1511-4281
AbstractControlling polarization states of ferroelectrics can enrich optoelectronic properties and functions, offering a new avenue for designing advanced electronic and optoelectronic devices. Here, ferroelectric semiconductor‐based field‐effect transistors (FeSFETs) are fabricated, where the channel is a ferroelectric semiconductor (e.g., α‐In2Se3). Multiple conductance states are achieved in α‐In2Se3‐based FeSFETs by controlling the ferroelectric polarization. The on/off current ratio (Ion/Ioff) is ≈105 with a dark current of ≈10−11 A by applying a single positive gate voltage pulse. Moreover, the device shows excellent endurance and retention performance. In a further step, the carrier transports and corresponding physics mechanism in various polarization states are studied by using Kelvin probe force microscopy (KPFM) and optoelectronic measurements. Finally, the α‐In2Se3‐based FETs can be trained. It can recognize handwritten digit images from MNIST dataset with a successful recognition accuracy of ≈95.5%. This work provides a new design idea and theoretical support for advanced optoelectronic devices in the field of in‐memory sensing and computing.
Ferroelectric and Optoelectronic Coupling Effects in Layered Ferroelectric Semiconductor‐Based FETs for Visual Simulation
https://orcid.org/0000-0003-1511-4281
AbstractControlling polarization states of ferroelectrics can enrich optoelectronic properties and functions, offering a new avenue for designing advanced electronic and optoelectronic devices. Here, ferroelectric semiconductor‐based field‐effect transistors (FeSFETs) are fabricated, where the channel is a ferroelectric semiconductor (e.g., α‐In2Se3). Multiple conductance states are achieved in α‐In2Se3‐based FeSFETs by controlling the ferroelectric polarization. The on/off current ratio (Ion/Ioff) is ≈105 with a dark current of ≈10−11 A by applying a single positive gate voltage pulse. Moreover, the device shows excellent endurance and retention performance. In a further step, the carrier transports and corresponding physics mechanism in various polarization states are studied by using Kelvin probe force microscopy (KPFM) and optoelectronic measurements. Finally, the α‐In2Se3‐based FETs can be trained. It can recognize handwritten digit images from MNIST dataset with a successful recognition accuracy of ≈95.5%. This work provides a new design idea and theoretical support for advanced optoelectronic devices in the field of in‐memory sensing and computing.
Ferroelectric and Optoelectronic Coupling Effects in Layered Ferroelectric Semiconductor‐Based FETs for Visual Simulation
Advanced Science
Zhao, Can (author) / Gao, Zhaotan (author) / Hong, Zian (author) / Guo, Hongzhi (author) / Cheng, Zhili (author) / Li, Yawei (author) / Shang, Liyan (author) / Zhu, Liangqing (author) / Zhang, Jinzhong (author) / Hu, Zhigao (author)
2025-01-22
Article (Journal)
Electronic Resource
English
Electrical characterization of MFeOS gate stacks for ferroelectric FETs
| British Library Online Contents | 2013
Lattice dynamics of layered ferroelectric semiconductor compound TlGaSe2
| British Library Online Contents | 2010
Side‐Gated In2O3 Nanowire Ferroelectric FETs for High‐Performance Nonvolatile Memory Applications
| Wiley | 2016
| British Library Online Contents | 2005
Processing and Characterization of Ba-Based Layered Ferroelectric Relaxors
| British Library Online Contents | 2002