The effect of interruption during the growth of strained GaAs/InGaAs/GaAs quantum wells by molecular beam epitaxy

Yoon, S. F. / Li, H. M. / Radhakrishnan, K. et al. | British Library Online Contents | 1993

Evidence for non-uniform interface thickness in strained InGaAs/InP quantum wells

Camassel, J. / Wolter, K. / Juillaguet, S. et al. | British Library Online Contents | 1993

Optical studies of strained InGaAs/GaAs single quantum wells

Shen, W. Z. / Tang, W. G. / Li, Z. Y. et al. | British Library Online Contents | 1994

Critical layer thickness in MOCVD grown InGaAs-GaAs strained quantum wells

Zhang, X. / Briot, O. / Gil, B. et al. | British Library Online Contents | 1995

Interface properties of strained InGaAs/InP quantum wells grown by low pressure, metallo-organic vapour phase epitaxy

Schwedler, R. / Gallmann, B. / Wolter, K. et al. | British Library Online Contents | 1993