Evaluation Method of Precipitated Oxygen Concentration in Low Resistivity Silicon Wafers Using X-ray Diffraction

Takeno, H. / Mizuno, M. / Ushio, S. et al. | British Library Online Contents | 1995

Infrared characterization of oxygen precipitates in silicon wafers with different concentrations of interstitial oxygen

Borghesi, A. / Sassella, A. / Geranzani, P. et al. | British Library Online Contents | 2000

Ab initio studies of intrinsic point defects, interstitial oxygen and vacancy or oxygen clustering in germanium crystals

Sueoka, K. / Vanhellemont, J. | British Library Online Contents | 2006

Optical absorption of precipitated oxygen in silicon at liquid helium temperature

Sassella, A. / Borghesi, A. / Borionetti, G. et al. | British Library Online Contents | 2000

Measurement of Interstitial Oxygen Striations in Silicon Single Crystals Using the Micro-FTIR Method

Iino, E. / Fusegawa, I. / Yamagishi, H. | British Library Online Contents | 1993