A molecular beam study of the adsorption of tertiarybutylarsine (TBAs) on As-rich GaAs (001) surfaces

Cui, J. / Ozeki, M. / Ohashi, M. | British Library Online Contents | 1997

Monoenergetic Positron Beam Study of Heavily Si-doped GaAs Grown by MOCVD using Tertiarybutylarsine

Chichibu, S. / Iwai, A. / Nakahara, Y. et al. | British Library Online Contents | 1993

Characterization of Excimer Laser Annealing of Arsenic Implanted Silicon

Akane, T. / Mastumoto, S. / Mizushima, I. | British Library Online Contents | 1993

Excimer laser doping techniques for II-VI semiconductors

Hatanaka, Y. / Niraula, M. / Nakamura, A. et al. | British Library Online Contents | 2001

Excimer-laser doping of spin-on dopant in silicon

Wong, Y. W. / Yang, X. Q. / Chan, P. W. et al. | British Library Online Contents | 1993