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The Study of Defects Induced by the Implantation of O Ions into GaAs by a Slow Positron Beam
The Study of Defects Induced by the Implantation of O Ions into GaAs by a Slow Positron Beam
The Study of Defects Induced by the Implantation of O Ions into GaAs by a Slow Positron Beam
Fujii, S. (Autor:in) / Wei, L. (Autor:in) / Tanigawa, S. (Autor:in) / Taguchi, T.
01.01.1993
411 pages
Aufsatz (Zeitschrift)
Unbekannt
DDC:
620.11
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