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Slow Positron Beam Investigations of Defects Caused by B^+ Implantation into Epitaxial 6H-SiC
Slow Positron Beam Investigations of Defects Caused by B^+ Implantation into Epitaxial 6H-SiC
Slow Positron Beam Investigations of Defects Caused by B^+ Implantation into Epitaxial 6H-SiC
Anwand, W. (Autor:in) / Brauer, G. (Autor:in) / Kuriplach, J. (Autor:in) / Skorupa, W. (Autor:in)
MATERIALS SCIENCE FORUM ; 445/446 ; 36-38
01.01.2004
3 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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