Implantation-caused open volume defects in Ge after flash lamp annealing (FLA) probed by slow positron implantation spectroscopy (SPIS)

Anwand, W. / Skorupa, W. / Schumann, T. et al. | British Library Online Contents | 2008

Characterization of vacancy-type defects in Al^+ and N^+ co-implanted SiC by slow positron implantation spectroscopy

Anwand, W. / Brauer, G. / Coleman, P.G. et al. | British Library Online Contents | 1999

Slow Positron Beam Investigations of Defects Caused by B^+ Implantation into Epitaxial 6H-SiC

Anwand, W. / Brauer, G. / Kuriplach, J. et al. | British Library Online Contents | 2004

Slow Positron Implantation Spectroscopy of Insulators: Charging Effects

Coleman, P. G. / Kuna, S. / Grynszpan, R. | British Library Online Contents | 1997

Vacancy-Type Defects in SrTiO~3 Probed by a Monoenergetic Positron Beam

Uedono, A. / Kiyohara, M. / Shimoyama, K. et al. | British Library Online Contents | 2004