A New Approach to Grain Boundary Engineering for Photovoltaic Polysilicon by Unidirectional and Rotational Solidification

Watanabe, T. / Kido, K. / Tsurekawa, S. et al. | British Library Online Contents | 2007

Thermal-induced normal grain growth mechanism in LPCVD polysilicon film

Akhtar, J. / Lamichhane, S. K. / Sen, P. | British Library Online Contents | 2005

Engineered Grain Boundary Junctions — Characteristics, Structure, Applications

Alarco, J. / Boikov, Yu. / Brorsson, G. et al. | Springer Verlag | 1994

EBSD Analysis of Grain Boundary Characteristics of Abnormally Grain Grown Alumina

Kim, D.-I. / Lee, J.-H. / Kim, Y.-W. et al. | British Library Online Contents | 2002

Evaluation of silicon nitride and silicon carbide as efficient polysilicon grain-growth inhibitors

Cha, C. L. / Chor, E. F. / Jia, Y. M. et al. | British Library Online Contents | 1999