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    The effect of interruption during the growth of strained GaAs/InGaAs/GaAs quantum wells by molecular beam epitaxy

    New search for: Yoon, S. F.
    New search for: Li, H. M.
    New search for: Radhakrishnan, K.
    New search for: Zhang, D. H.

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    The effect of interruption during the growth of strained GaAs/InGaAs/GaAs quantum wells by molecular beam epitaxy

    New search for: Yoon, S. F.
    New search for: Li, H. M.
    New search for: Radhakrishnan, K.
    New search for: Zhang, D. H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    The effect of interruption during the growth of strained GaAs/InGaAs/GaAs quantum wells by molecular beam epitaxy

    New search for: Yoon, S. F.
    New search for: Li, H. M.
    New search for: Radhakrishnan, K.
    New search for: Zhang, D. H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Check availability in my library
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    Document information
    Title:

    The effect of interruption during the growth of strained GaAs/InGaAs/GaAs quantum wells by molecular beam epitaxy

    Contributors:

    Yoon, S. F. (author) / Li, H. M. (author) / Radhakrishnan, K. (author) / Zhang, D. H. (author)

    Published in:

    JOURNAL OF MATERIALS RESEARCH -PITTSBURGH- ; 8 ; 3122

    Publication date:

    1993-01-01

    Size:

    3122 pages

    ISSN:

    0884-2914

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    Unknown

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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