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    Growth of strained InGaAs/GaAs by molecular beam epitaxy: a surface morphology, Raman spectroscopy and photoluminescence combined study

    New search for: Yoon, S. F.

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    Growth of strained InGaAs/GaAs by molecular beam epitaxy: a surface morphology, Raman spectroscopy and photoluminescence combined study

    New search for: Yoon, S. F.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Growth of strained InGaAs/GaAs by molecular beam epitaxy: a surface morphology, Raman spectroscopy and photoluminescence combined study

    New search for: Yoon, S. F.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
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    Document information
    Title:

    Growth of strained InGaAs/GaAs by molecular beam epitaxy: a surface morphology, Raman spectroscopy and photoluminescence combined study

    Contributors:

    Yoon, S. F. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 78 ; 33

    Publication date:

    1994-01-01

    Size:

    33 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    Unknown

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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