Monoenergetic Positron Beam Study of Heavily Si-doped GaAs Grown by MOCVD using Tertiarybutylarsine

Chichibu, S. / Iwai, A. / Nakahara, Y. et al. | British Library Online Contents | 1993

GaN Grown Using Trimethylgallium and Triethylgallium

Saxler, A. / Kung, P. / Zhang, X. et al. | British Library Online Contents | 1997

A molecular beam study of the adsorption of tertiarybutylarsine (TBAs) on As-rich GaAs (001) surfaces

Cui, J. / Ozeki, M. / Ohashi, M. | British Library Online Contents | 1997

Adsorption mechanisms of tertiarybutylarsine on Ga- and As-rich GaAs(001) surfaces

Ozeki, M. / Cui, J. / Ohashi, M. | British Library Online Contents | 1997

Selective epitaxial growth of GaInP by LP-MOCVD using ethyldimethylindium, trimethylindium, trimethylgallium and triethylgallium as group III sources

Chan, S.-H. / Sze, S. M. / Chang, C.-Y. et al. | British Library Online Contents | 1994