A molecular beam study of the adsorption of tertiarybutylarsine (TBAs) on As-rich GaAs (001) surfaces

Cui, J. / Ozeki, M. / Ohashi, M. | British Library Online Contents | 1997

Chemical beam epitaxial growth of GaAs from tertiarybutylarsine and triethylgallium precursors

Ait-Lhouss, M. / Castao, J. L. / Piqueras, J. | British Library Online Contents | 1994

Monoenergetic Positron Beam Study of Heavily Si-doped GaAs Grown by MOCVD using Tertiarybutylarsine

Chichibu, S. / Iwai, A. / Nakahara, Y. et al. | British Library Online Contents | 1993

MOVPE growth of Si-doped GaAs and AlxGa1-xAs using tertiarybutylarsine (TBA) in pure N2 ambient

Huang, G. S. / Tang, X. H. / Zhang, B. L. | British Library Online Contents | 2003

Heavily Arsenic Doping into Si by ArF Excimer Laser Irradiation using Tertiarybutylarsine (tBAs)

Chichibu, S. / Nii, T. / Akane, T. et al. | British Library Online Contents | 1993