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GaN Grown Using Trimethylgallium and Triethylgallium
GaN Grown Using Trimethylgallium and Triethylgallium
GaN Grown Using Trimethylgallium and Triethylgallium
Saxler, A. (Autor:in) / Kung, P. (Autor:in) / Zhang, X. (Autor:in) / Walker, D. (Autor:in) / Solomon, J. (Autor:in) / Mitchel, W. C. (Autor:in) / Razeghi, M. (Autor:in)
MATERIALS SCIENCE FORUM ; 258/263 ; 1081-1086
01.01.1997
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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British Library Online Contents | 1994
|Chemical beam epitaxial growth of GaAs from tertiarybutylarsine and triethylgallium precursors
British Library Online Contents | 1994
|Kinetics and mechanism of atomic layer epitaxy of GaAs using trimethylgallium
British Library Online Contents | 1994
|Pulsed trimethylgallium scattering from As-stabilized and Ga-stabilized surfaces
British Library Online Contents | 1994
|