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Acceptor-Doping in ZnS/GaAs Grown by Means of the Post-Heated Molecular Beam Epitaxy
Acceptor-Doping in ZnS/GaAs Grown by Means of the Post-Heated Molecular Beam Epitaxy
Acceptor-Doping in ZnS/GaAs Grown by Means of the Post-Heated Molecular Beam Epitaxy
Saito, H. (Autor:in) / Yoneta, M. (Autor:in) / Ohishi, M. (Autor:in) / Kobashi, H. (Autor:in) / Heinrich, H. / Mullin, J. B.
01.01.1995
69 pages
Aufsatz (Zeitschrift)
Unbekannt
DDC:
620.11
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