Acceptor-Doping in ZnS/GaAs Grown by Means of the Post-Heated Molecular Beam Epitaxy: Fid-Bau Portal

Acceptor-Doping in ZnS/GaAs Grown by Means of the Post-Heated Molecular Beam Epitaxy

Saito, H. / Yoneta, M. / Ohishi, M. / Kobashi, H.

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Acceptor-Doping in ZnS/GaAs Grown by Means of the Post-Heated Molecular Beam Epitaxy

Saito, H. / Yoneta, M. / Ohishi, M. / Kobashi, H.

Acceptor-Doping in ZnS/GaAs Grown by Means of the Post-Heated Molecular Beam Epitaxy

Saito, H. / Yoneta, M. / Ohishi, M. / Kobashi, H.

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Document information

Title:

Acceptor-Doping in ZnS/GaAs Grown by Means of the Post-Heated Molecular Beam Epitaxy

Contributors:

Saito, H. (author) / Yoneta, M. (author) / Ohishi, M. (author) / Kobashi, H. (author) / Heinrich, H. / Mullin, J. B.

Published in:

II-VI Compounds and Semi-magnetic Semiconductors ; 69

MATERIALS SCIENCE FORUM

Publication date:

1995-01-01

Size:

69 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

Unknown

Classification:

DDC: 620.11

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