Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Incorporation of boron in SiGe(C) epitaxial layers grown by reduced pressure chemical vapor deposition
Incorporation of boron in SiGe(C) epitaxial layers grown by reduced pressure chemical vapor deposition
Incorporation of boron in SiGe(C) epitaxial layers grown by reduced pressure chemical vapor deposition
Hallstedt, J. (Autor:in) / Parent, A. (Autor:in) / Ostling, M. (Autor:in) / Radamson, H. H. (Autor:in)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 8 ; 97-101
01.01.2005
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Surface studies of SiC epitaxial layers grown by chemical vapor deposition
British Library Online Contents | 2006
|Doping of InGaP epitaxial layers grown by low pressure metal-organic chemical vapor deposition
British Library Online Contents | 1993
|4H-SiC Carbon-Face Epitaxial Layers Grown by Low-Pressure Hot-Wall Chemical Vapor Deposition
British Library Online Contents | 2004
|Disordered Si/SiGe superlattices grown by ultrahigh vacuum chemical vapor deposition
British Library Online Contents | 1996
|Thin strain-relaxed SiGe grown by ultrahigh vacuum chemical vapor deposition
British Library Online Contents | 2006
|