In-situ control during molecular beam epitaxy: impurity incorporation and dissimilar materials epitaxial growth

Daweritz, L. / Wang, Z. M. / Schippan, F. et al. | British Library Online Contents | 2000

Arsenic incorporation and doping behaviour in silicon and SiGe epitaxial layers grown by gas source molecular beam epitaxy

Fernandez, J. M. / Xie, M. H. / Matsumura, A. et al. | British Library Online Contents | 1995

Epitaxial growth of SiGe thin films by ion-beam sputtering

Sasaki, K. / Nakata, K. / Hata, T. | British Library Online Contents | 1997

Epitaxial growth of SiGe layers for BiCMOS applications

Regolini, J. L. / Pejnefors, J. / Baffert, T. et al. | British Library Online Contents | 1998

Nanomechanical characteristics of annealed Si/SiGe superlattices

Wu, M. J. / Wen, H. C. / Wu, S. C. et al. | British Library Online Contents | 2011