Enhanced disordering of GaAs/AlGaAs multiple quantum well by rapid thermal annealing using plasma enhanced chemical vapour deposited SiN capping layer grown at high RF power condition

Choi, W. J. / Lee, J. I. / Han, I. K. et al. | British Library Online Contents | 1994

Dielectric cap quantum well disordering for band gap tuning of InGaAs/InGaAsP quantum well structure using various combinations of semiconductor-dielectric capping layers

Yi, H. T. / Cho, J. / Choi, W. J. et al. | British Library Online Contents | 2002

Dependence of quantum well disordering of InGaAs/InGaAsP quantum well structures on the various combinations of semiconductor-dielectric capping layers

Yi, H. T. / Cho, J. / Choi, W. J. et al. | British Library Online Contents | 2000

AlGaInAs capping layer impact on emission and structure of AlGaAs/GaAs quantum wells with InAs quantum dots

Cisneros Tamayo, R. / Polupan, G. / Torchynska, T.V. et al. | British Library Online Contents | 2019

Effect of temperature on GaAs/AlGaAs multiple quantum well solar cells

Aperathitis, E. / Scott, C. G. / Sands, D. et al. | British Library Online Contents | 1998