Dependence of quantum well disordering of InGaAs/InGaAsP quantum well structures on the various combinations of semiconductor-dielectric capping layers

Yi, H. T. / Cho, J. / Choi, W. J. et al. | British Library Online Contents | 2000

Dielectric cap disordering of GaAs/AlGaAs multiple quantum well by using plasma enhanced chemical vapour deposited SiN capping layer

Choi, W. J. / Lee, S. / Kim, Y. et al. | British Library Online Contents | 1995

Be diffusion in InGaAs, InGaAsP epitaxial layers and across InGaAs/InGaAsP, InGaAs/InP heterointerfaces

Koumetz, S. / Marcon, J. / Gautier, S. et al. | British Library Online Contents | 1999

Investigations on the blue-shift phenomena in argon plasma intermixed InGaAs/InGaAsP quantum well structures

Arokiaraj, J. / Djie, H. S. / Mei, T. | British Library Online Contents | 2004

Impurity-free intermixing in compressively strained InGaAsP multiple quantum well structures

Teng, J. H. / Dong, J. R. / Chua, S. J. et al. | British Library Online Contents | 2001