Capacitance and drain current deep level transient spectroscopy measurements on molecular beam epitaxy grown GaAs/In~0~.~2~5Ga~0~.~7~5As/Al~0~.~3Ga~0~.~7As high electron mobility transistors: Fid-Bau Portal

Capacitance and drain current deep level transient spectroscopy measurements on molecular beam epitaxy grown GaAs/In~0~.~2~5Ga~0~.~7~5As/Al~0~.~3Ga~0~.~7As high electron mobility transistors

Haddab, Y. / Py, M. A. / Bonard, J.-M. / Buehlmann, H.-J. / Ilegems, M.

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Capacitance and drain current deep level transient spectroscopy measurements on molecular beam epitaxy grown GaAs/In~0~.~2~5Ga~0~.~7~5As/Al~0~.~3Ga~0~.~7As high electron mobility transistors

Haddab, Y. / Py, M. A. / Bonard, J.-M. / Buehlmann, H.-J. / Ilegems, M.

Capacitance and drain current deep level transient spectroscopy measurements on molecular beam epitaxy grown GaAs/In~0~.~2~5Ga~0~.~7~5As/Al~0~.~3Ga~0~.~7As high electron mobility transistors

Haddab, Y. / Py, M. A. / Bonard, J.-M. / Buehlmann, H.-J. / Ilegems, M.

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Titel:

Capacitance and drain current deep level transient spectroscopy measurements on molecular beam epitaxy grown GaAs/In~0~.~2~5Ga~0~.~7~5As/Al~0~.~3Ga~0~.~7As high electron mobility transistors

Beteiligte:

Haddab, Y. (Autor:in) / Py, M. A. (Autor:in) / Bonard, J.-M. (Autor:in) / Buehlmann, H.-J. (Autor:in) / Ilegems, M. (Autor:in)

Erschienen in:

MATERIALS SCIENCE AND TECHNOLOGY -LONDON- ; 11 ; 1079-1082

Erscheinungsdatum:

01.01.1995

Format / Umfang:

4 pages

ISSN:

0267-0836

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 620.11

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