Capacitance and drain current deep level transient spectroscopy measurements on molecular beam epitaxy grown GaAs/In~0~.~2~5Ga~0~.~7~5As/Al~0~.~3Ga~0~.~7As high electron mobility transistors: Fid-Bau Portal

Capacitance and drain current deep level transient spectroscopy measurements on molecular beam epitaxy grown GaAs/In~0~.~2~5Ga~0~.~7~5As/Al~0~.~3Ga~0~.~7As high electron mobility transistors

Haddab, Y. / Py, M. A. / Bonard, J.-M. / Buehlmann, H.-J. / Ilegems, M.

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Capacitance and drain current deep level transient spectroscopy measurements on molecular beam epitaxy grown GaAs/In~0~.~2~5Ga~0~.~7~5As/Al~0~.~3Ga~0~.~7As high electron mobility transistors

Haddab, Y. / Py, M. A. / Bonard, J.-M. / Buehlmann, H.-J. / Ilegems, M.

Capacitance and drain current deep level transient spectroscopy measurements on molecular beam epitaxy grown GaAs/In~0~.~2~5Ga~0~.~7~5As/Al~0~.~3Ga~0~.~7As high electron mobility transistors

Haddab, Y. / Py, M. A. / Bonard, J.-M. / Buehlmann, H.-J. / Ilegems, M.

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Title:

Capacitance and drain current deep level transient spectroscopy measurements on molecular beam epitaxy grown GaAs/In~0~.~2~5Ga~0~.~7~5As/Al~0~.~3Ga~0~.~7As high electron mobility transistors

Contributors:

Haddab, Y. (author) / Py, M. A. (author) / Bonard, J.-M. (author) / Buehlmann, H.-J. (author) / Ilegems, M. (author)

Published in:

MATERIALS SCIENCE AND TECHNOLOGY -LONDON- ; 11 ; 1079-1082

Publication date:

1995-01-01

Size:

4 pages

ISSN:

0267-0836

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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