Effects of growth sequence on atomic level interfacial structures and characteristics of GaInP/GaAs/GaInP double heterostructures grown by low-pressure organometallic vapor phase epitaxy

Yoshikane, T. / Urakami, A. / Koizumi, A. et al. | British Library Online Contents | 2004

Reactor structure dependence of interface abruptness in GaInAs/InP and GaInP/GaAs grown by organometallic vapor phase epitaxy

Fujiwara, Y. / Nonogaki, Y. / Oga, R. et al. | British Library Online Contents | 2003

Room temperature 1.5mm electroluminescnence from GaInP/Er,O-codoped GaAs/GaInP double heterostructure injection-type light emitting diodes grown by organometallic vapor phase epitaxy

Fujiwara, Y. / Koizumi, A. / Urakami, A. et al. | British Library Online Contents | 2003

Control of defects in GaAs/GaInP interface grown by MOVPE

Arai, T. / Uchida, K. / Tokunaga, H. et al. | British Library Online Contents | 1995

XPS study of GaInP on GaAs interface

Dehaese, O. / Wallart, X. / Schuler, O. et al. | British Library Online Contents | 1998