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Influence of Simultaneously Implanted As^+ Ions on Diffusivity and Activation Efficiency of B Atoms Implanted Into Silicon
Influence of Simultaneously Implanted As^+ Ions on Diffusivity and Activation Efficiency of B Atoms Implanted Into Silicon
Influence of Simultaneously Implanted As^+ Ions on Diffusivity and Activation Efficiency of B Atoms Implanted Into Silicon
Yokota, K. (Autor:in) / Nakamura, T. (Autor:in) / Miyashita, F. (Autor:in) / Hirai, K. (Autor:in) / Takano, H. (Autor:in) / Kumagai, M. (Autor:in) / Ando, Y. (Autor:in) / Matsuda, K. (Autor:in)
MATERIALS SCIENCE FORUM ; 1637-1642
01.01.1995
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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