Influence of Simultaneously Implanted As^+ Ions on Diffusivity and Activation Efficiency of B Atoms Implanted Into Silicon: Fid-Bau Portal

Influence of Simultaneously Implanted As^+ Ions on Diffusivity and Activation Efficiency of B Atoms Implanted Into Silicon

Yokota, K. / Nakamura, T. / Miyashita, F. / Hirai, K. / Takano, H. / Kumagai, M. / Ando, Y. / Matsuda, K.

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Influence of Simultaneously Implanted As^+ Ions on Diffusivity and Activation Efficiency of B Atoms Implanted Into Silicon

Yokota, K. / Nakamura, T. / Miyashita, F. / Hirai, K. / Takano, H. / Kumagai, M. / Ando, Y. / Matsuda, K.

Influence of Simultaneously Implanted As^+ Ions on Diffusivity and Activation Efficiency of B Atoms Implanted Into Silicon

Yokota, K. / Nakamura, T. / Miyashita, F. / Hirai, K. / Takano, H. / Kumagai, M. / Ando, Y. / Matsuda, K.

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Title:

Influence of Simultaneously Implanted As^+ Ions on Diffusivity and Activation Efficiency of B Atoms Implanted Into Silicon

Contributors:

Yokota, K. (author) / Nakamura, T. (author) / Miyashita, F. (author) / Hirai, K. (author) / Takano, H. (author) / Kumagai, M. (author) / Ando, Y. (author) / Matsuda, K. (author)

Published in:

MATERIALS SCIENCE FORUM ; 1637-1642

Publication date:

1995-01-01

Size:

6 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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