Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Relaxation-Induced Deep Levels in SiGe/Si Heteroepitaxial Films
Relaxation-Induced Deep Levels in SiGe/Si Heteroepitaxial Films
Relaxation-Induced Deep Levels in SiGe/Si Heteroepitaxial Films
Mera, Y. (Autor:in) / Maeda, K. (Autor:in) / Shiraki, Y. (Autor:in)
MATERIALS SCIENCE FORUM ; 365-370
01.01.1995
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Finite elements analysis of heteroepitaxial SiGe layers grown by excimer laser
British Library Online Contents | 2005
|Strain relaxation through islands formation in epitaxial SiGe thin films
British Library Online Contents | 1996
|Surface Roughening of Heteroepitaxial Thin Films
British Library Online Contents | 1999
|Strain Relaxation and Induced Defects in SiGe Thin Films Grown on Ion-Implanted Si Substrates
British Library Online Contents | 2004
|British Library Online Contents | 2004
|