Simultaneous optical measurement of Ge content and Boron doping in strained epitaxial films using a novel data-analysis technique

Morris, S. / Fougeres, P. / Bozzo-Escoubas, S. et al. | British Library Online Contents | 2005

Simultaneous optical measurement of Ge-content and carbon doping in strained epitaxial SiGe films

Morris, S. / Le Cunff, D. / Ristoiu, D. et al. | British Library Online Contents | 2006

Relaxation-Induced Deep Levels in SiGe/Si Heteroepitaxial Films

Mera, Y. / Maeda, K. / Shiraki, Y. | British Library Online Contents | 1995

Boron diffusion in strained and strain-relaxed SiGe

Wang, C. C. / Sheu, Y. M. / Liu, S. et al. | British Library Online Contents | 2005

Strained semiconductors structures: simulation of the thin films heteroepitaxial growth

Sahlaoui, M. / Rouhani, M.D. / Esteve, D. et al. | British Library Online Contents | 1999