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Influence of Cu Contamination and Hydrogenation on Recombination Activity of Misfit Dislocations in SiGe/Si Epilayers
Influence of Cu Contamination and Hydrogenation on Recombination Activity of Misfit Dislocations in SiGe/Si Epilayers
Influence of Cu Contamination and Hydrogenation on Recombination Activity of Misfit Dislocations in SiGe/Si Epilayers
Kittler, M. (Autor:in) / Ulhaq-Bouillet, C. (Autor:in) / Higgs, V. (Autor:in)
MATERIALS SCIENCE FORUM ; 383-388
01.01.1995
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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