Influence of Cu Contamination and Hydrogenation on Recombination Activity of Misfit Dislocations in SiGe/Si Epilayers: Fid-Bau Portal

Influence of Cu Contamination and Hydrogenation on Recombination Activity of Misfit Dislocations in SiGe/Si Epilayers

Kittler, M. / Ulhaq-Bouillet, C. / Higgs, V.

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Influence of Cu Contamination and Hydrogenation on Recombination Activity of Misfit Dislocations in SiGe/Si Epilayers

Kittler, M. / Ulhaq-Bouillet, C. / Higgs, V.

Influence of Cu Contamination and Hydrogenation on Recombination Activity of Misfit Dislocations in SiGe/Si Epilayers

Kittler, M. / Ulhaq-Bouillet, C. / Higgs, V.

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Check availability in my library

Order at Subito €

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Document information

Title:

Influence of Cu Contamination and Hydrogenation on Recombination Activity of Misfit Dislocations in SiGe/Si Epilayers

Contributors:

Kittler, M. (author) / Ulhaq-Bouillet, C. (author) / Higgs, V. (author)

Published in:

MATERIALS SCIENCE FORUM ; 383-388

Publication date:

1995-01-01

Size:

6 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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