Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Detailed analysis of -SiC formation by high dose carbon ion implantation in silicon
Detailed analysis of -SiC formation by high dose carbon ion implantation in silicon
Detailed analysis of -SiC formation by high dose carbon ion implantation in silicon
Romano-Rodriguez, A. (Autor:in) / Serre, C. (Autor:in) / Calvo-Barrio, L. (Autor:in) / Perez-Rodriguez, A. (Autor:in) / Morante, J. R. (Autor:in) / Koegler, R. (Autor:in) / Skorupa, W. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 36 ; 282-285
01.01.1996
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
High Dose Implantation in 6H-SiC
| British Library Online Contents | 2001
Defect levels in n-silicon after high energy and high dose implantation of proton
| British Library Online Contents | 1996
Thermal stability of defect complexes due to high dose MeV implantation in silicon
| British Library Online Contents | 2000
Thermal stability of defect complexes due to high dose MeV implantation in silicon
| British Library Online Contents | 2000
Damage-to-dose ratio after low energy silicon ion implantation into crystalline silicon
| British Library Online Contents | 1993