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Detailed analysis of -SiC formation by high dose carbon ion implantation in silicon
Detailed analysis of -SiC formation by high dose carbon ion implantation in silicon
Detailed analysis of -SiC formation by high dose carbon ion implantation in silicon
Romano-Rodriguez, A. (author) / Serre, C. (author) / Calvo-Barrio, L. (author) / Perez-Rodriguez, A. (author) / Morante, J. R. (author) / Koegler, R. (author) / Skorupa, W. (author)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 36 ; 282-285
1996-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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