Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Phosphorus redistribution in the surface region of heavily phosphorus doped silicon
Phosphorus redistribution in the surface region of heavily phosphorus doped silicon
Phosphorus redistribution in the surface region of heavily phosphorus doped silicon
Mizokawa, Y. (Autor:in) / Ying, W. B. (Autor:in) / Yu, Y. B. (Autor:in) / Kamiura, Y. (Autor:in) / Iida, M. (Autor:in) / Kawamoto, K. (Autor:in) / Feldman, L. C. / Nishizawa, J. / Van der Weg, W. F.
01.01.1996
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Phosphorus redistribution in the surface region of heavily phosphorus doped silicon
British Library Online Contents | 1996
|Annealing behavior of phosphorus in native oxide films on heavily phosphorus doped silicon
British Library Online Contents | 1996
|Annealing behavior of phosphorus in native oxide films on heavily phosphorus doped silicon
British Library Online Contents | 1996
|Oxygen precipitation in heavily phosphorus-doped silicon wafer annealed at high temperatures
British Library Online Contents | 2009
|British Library Online Contents | 2001
|