GaN Grown Using Trimethylgallium and Triethylgallium

Saxler, A. / Kung, P. / Zhang, X. et al. | British Library Online Contents | 1997

Selective epitaxial growth of GaInP by LP-MOCVD using ethyldimethylindium, trimethylindium, trimethylgallium and triethylgallium as group III sources

Chan, S.-H. / Sze, S. M. / Chang, C.-Y. et al. | British Library Online Contents | 1994

Chemical beam epitaxial growth of GaAs from tertiarybutylarsine and triethylgallium precursors

Ait-Lhouss, M. / Castao, J. L. / Piqueras, J. | British Library Online Contents | 1994

Kinetics and mechanism of atomic layer epitaxy of GaAs using trimethylgallium

Ohno, H. / Goto, S. / Nomura, Y. et al. | British Library Online Contents | 1994

Initial oxidation of Si(311) surfaces studied by high-resolution electron energy loss spectroscopy

Ikeda, H. / Yamada, T. / Hotta, K. et al. | British Library Online Contents | 1996