Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Epitaxial growth of SiGe thin films by ion-beam sputtering
Epitaxial growth of SiGe thin films by ion-beam sputtering
Epitaxial growth of SiGe thin films by ion-beam sputtering
Sasaki, K. (Autor:in) / Nakata, K. (Autor:in) / Hata, T. (Autor:in)
APPLIED SURFACE SCIENCE ; 113/114 ; 43-47
01.01.1997
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Rapid thermal oxidation of epitaxial SiGe thin films
British Library Online Contents | 2002
|Epitaxial growth of Bi~4Ti~3O~1~2 thin films by dual ion-beam sputtering
British Library Online Contents | 1992
|Strain relaxation through islands formation in epitaxial SiGe thin films
British Library Online Contents | 1996
|Boron and phosphorous diffusion in ion-beam-sputtering deposited SiGe films
British Library Online Contents | 2002
|Epitaxial growth of "infinite layer" thin films and multilayers by rf magnetron sputtering
British Library Online Contents | 1998
|