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Properties of silicon pulse doped InGaP layers grown by LP-MOCVD
Properties of silicon pulse doped InGaP layers grown by LP-MOCVD
Properties of silicon pulse doped InGaP layers grown by LP-MOCVD
Malacky, L. (Autor:in) / Kuedela, R. (Autor:in) / Morvic, M. (Autor:in) / Novak, J. (Autor:in) / Wehmann, H.-H. (Autor:in) / Jantz, W. / Baeumler, M.
01.01.1997
3 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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