Conventional EBIC versus MOS/EBIC study of electrically active defects in Si and SOI

Bondarenko, I. / Kirk, H. / Kononchuk, O. et al. | British Library Online Contents | 1996

Correlation of EBIC and SWBXT Imaged Defects and Epilayer Growth Pits in 6H-SiC Schottky Diodes

Schnabel, C. M. / Tabib-Azar, M. / Neudeck, P. G. et al. | British Library Online Contents | 2000

Simulation of recombination contrast of extended defects in the modulated EBIC

Sirotkin, V. V. / Yakimov, E. B. / Zaitsev, S. I. | British Library Online Contents | 1996

Investigation of Structural Defects during 4H-SiC Schottky Diode Processing by Synchrotron Topography

Pernot, E. / Neyret, E. / Moulin, C. et al. | British Library Online Contents | 2002

EBIC study of recombination activity of oxygen precipitation related defects in Si

Seifert, W. / Kittler, M. / Vanhellemont, J. | British Library Online Contents | 1996