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Dependence of TO and LO mode frequency of thermally grown silicon dioxide films on annealing temperature
Dependence of TO and LO mode frequency of thermally grown silicon dioxide films on annealing temperature
Dependence of TO and LO mode frequency of thermally grown silicon dioxide films on annealing temperature
Ishikawa, K. (Autor:in) / Uchiyama, Y. (Autor:in) / Ogawa, H. (Autor:in) / Fujimura, S. (Autor:in)
APPLIED SURFACE SCIENCE ; 117/118 ; 212-215
01.01.1997
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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