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Dependence of TO and LO mode frequency of thermally grown silicon dioxide films on annealing temperature

Ishikawa, K. / Uchiyama, Y. / Ogawa, H. / Fujimura, S.

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Dependence of TO and LO mode frequency of thermally grown silicon dioxide films on annealing temperature

Ishikawa, K. / Uchiyama, Y. / Ogawa, H. / Fujimura, S.

Dependence of TO and LO mode frequency of thermally grown silicon dioxide films on annealing temperature

Ishikawa, K. / Uchiyama, Y. / Ogawa, H. / Fujimura, S.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Dependence of TO and LO mode frequency of thermally grown silicon dioxide films on annealing temperature

Contributors:

Ishikawa, K. (author) / Uchiyama, Y. (author) / Ogawa, H. (author) / Fujimura, S. (author)

Published in:

APPLIED SURFACE SCIENCE ; 117/118 ; 212-215

Publication date:

1997-01-01

Size:

4 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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