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Photoluminescence characterization of GaN thin film grown by atmospheric pressure organometallic vapor phase epitaxy

Liao, S. M. / Wen, J. H. / Chou, W. C. / Lan, S. M.

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Photoluminescence characterization of GaN thin film grown by atmospheric pressure organometallic vapor phase epitaxy

Liao, S. M. / Wen, J. H. / Chou, W. C. / Lan, S. M.

Photoluminescence characterization of GaN thin film grown by atmospheric pressure organometallic vapor phase epitaxy

Liao, S. M. / Wen, J. H. / Chou, W. C. / Lan, S. M.

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Photoluminescence characterization of GaN thin film grown by atmospheric pressure organometallic vapor phase epitaxy

Contributors:

Liao, S. M. (author) / Wen, J. H. (author) / Chou, W. C. (author) / Lan, S. M. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 48 ; 205-210

Publication date:

1997-01-01

Size:

6 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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