Implantation-caused open volume defects in Ge after flash lamp annealing (FLA) probed by slow positron implantation spectroscopy (SPIS)

Anwand, W. / Skorupa, W. / Schumann, T. et al. | British Library Online Contents | 2008

Vacancy-type defects in 6H-SiC caused by N+ and Al+ high fluence co-implantation

Anwand, W. / Brauer, G. / Skorupa, W. | British Library Online Contents | 2002

Weak fluence dependence of charge generation in ultra-thin oxides on silicon

Farmer, K. R. / Debauche, C. P. / Giordano, A. R. et al. | British Library Online Contents | 1996

Ion implantation induced by Cu ablation at high laser fluence

Torrisi, L. / Mezzasalma, A. M. / Gammino, S. et al. | British Library Online Contents | 2006

Electronmicroscopical study of the formation of iron carbide phases after high-fluence carbon ion implantation into iron at low temperatures

Hammerl, C. / Koeniger, A. / Rauschenbach, B. | British Library Online Contents | 1998