Evolution of ion implantation-caused vacancy-type defects in 6H-SiC probed by slow positron implantation spectroscopy

Anwand, W. / Brauer, G. / Skorupa, W. | British Library Online Contents | 2001

Vacancy Defects in As-Polished and in High-Fluence H^+-Implanted 6H-SiC Detected by Slow Positron Annihilation Spectroscopy

Barthe, M.-F. / Desgardin, P. / Henry, L. et al. | British Library Online Contents | 2002

Fluence Dependence of the Formation of Open-Volume Defects in Silicon After Ion Implantation

Eichler, S. / Boerner, F. / Gebauer, J. et al. | British Library Online Contents | 1997

Ion implantation induced by Cu ablation at high laser fluence

Torrisi, L. / Mezzasalma, A. M. / Gammino, S. et al. | British Library Online Contents | 2006

Vacancy defects induced in sintered polished UO2 disks by helium implantation

Labrim, H. / Barthe, M. F. / Desgardin, P. et al. | British Library Online Contents | 2006