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Coimplantation Effects on the Electrical Properties of Boron and Aluminum Acceptors in 4H-SiC
Coimplantation Effects on the Electrical Properties of Boron and Aluminum Acceptors in 4H-SiC
Coimplantation Effects on the Electrical Properties of Boron and Aluminum Acceptors in 4H-SiC
Itoh, H. (Autor:in) / Troffer, T. (Autor:in) / Pensl, G. (Autor:in)
MATERIALS SCIENCE FORUM ; 264/268 ; 685-688
01.01.1998
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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