Coimplantation Effects on the Electrical Properties of Boron and Aluminum Acceptors in 4H-SiC: Fid-Bau Portal

Coimplantation Effects on the Electrical Properties of Boron and Aluminum Acceptors in 4H-SiC

Itoh, H. / Troffer, T. / Pensl, G.

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Coimplantation Effects on the Electrical Properties of Boron and Aluminum Acceptors in 4H-SiC

Itoh, H. / Troffer, T. / Pensl, G.

Coimplantation Effects on the Electrical Properties of Boron and Aluminum Acceptors in 4H-SiC

Itoh, H. / Troffer, T. / Pensl, G.

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Access via TIB

Check availability in my library

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Document information

Title:

Coimplantation Effects on the Electrical Properties of Boron and Aluminum Acceptors in 4H-SiC

Contributors:

Itoh, H. (author) / Troffer, T. (author) / Pensl, G. (author)

Published in:

MATERIALS SCIENCE FORUM ; 264/268 ; 685-688

Publication date:

1998-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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