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6H-SiC Crystallinity Behaviour upon B Implantation Studied by Raman Scattering
6H-SiC Crystallinity Behaviour upon B Implantation Studied by Raman Scattering
6H-SiC Crystallinity Behaviour upon B Implantation Studied by Raman Scattering
Paskova, T. (Autor:in) / Valcheva, E. (Autor:in) / Ivanov, I. G. (Autor:in) / Yakimova, R. (Autor:in) / Savage, S. (Autor:in) / Nordell, N. (Autor:in) / Harris, C. I. (Autor:in)
MATERIALS SCIENCE FORUM ; 264/268 ; 741-744
01.01.1998
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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